Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF
- RS-artikelnummer:
- 543-1083
- Distrelec artikelnummer:
- 302-84-006
- Tillv. art.nr:
- IRF1404PBF
- Tillverkare / varumärke:
- Infineon
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*vägledande pris
- RS-artikelnummer:
- 543-1083
- Distrelec artikelnummer:
- 302-84-006
- Tillv. art.nr:
- IRF1404PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 202A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.004Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 131nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Width | 4.83 mm | |
| Distrelec Product Id | 30284006 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 202A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.004Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 131nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Width 4.83 mm | ||
Distrelec Product Id 30284006 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF
This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.
Features & Benefits
• Continuous drain current of 202A supports robust performance
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting
Applications
• Employed in industrial automation systems for efficient power switching
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management
What type of voltage can be managed?
The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.
How does its low on-resistance impact system efficiency?
The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.
What temperatures can it withstand during operation?
It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.
Can it handle pulsed drain currents?
Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.
What is the significance of the TO-220AB package?
The TO-220AB package facilitates effective heat dissipation and convenient mounting, suitable for both commercial and industrial uses.
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