Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK IRLU024NPBF

RS-artikelnummer:: 543-0591
Tillv. art.nr:: IRLU024NPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK IRLU024NPBF

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RS-artikelnummer:: 543-0591
Tillv. art.nr:: IRLU024NPBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	15nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	45W
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Width	2.39 mm
	Height	6.22mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 15nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 45W
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Width 2.39 mm
	Height 6.22mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRLU024NPBF

This MOSFET is a high-performance power device designed specifically for demanding applications within the electrical and mechanical industries. It features an enhancement mode configuration and operates effectively within a temperature range of -55°C to +175°C. With compact dimensions of 6.73mm in length, 2.39mm in width, and 6.22mm in height, it can be easily integrated into various electronic setups.

Features & Benefits

• Achieves a maximum continuous drain current of 17A

• Offers a maximum drain-source voltage of 55V

• Supports a maximum power dissipation of 45W

• Rugged design suitable for high-temperature applications

• Compatible with through-hole mounting for versatile installation

Applications

• Used in motor control systems for precise regulation

• Suitable for switch-mode power supplies for efficient energy conversion

• Effective in industrial automation equipment for reliable performance

• Utilised in consumer electronics for improved power management

• Ideal for power management circuits requiring high current

What is the significance of the on-resistance in this device?

The low Rds(on) of 65mΩ ensures minimal energy loss during operation, enhancing the overall efficiency of circuits designed using this specific device. This characteristic also supports the capacity for higher current without overheating issues in electronic applications.

How does this MOSFET perform in high-temperature environments?

This device is engineered to function reliably in temperatures ranging from -55°C to +175°C, making it suitable for environments that experience significant thermal stress, such as industrial machinery and automotive applications.

Can it handle pulsed drain currents?

Yes, the device supports pulsed drain currents up to 72A, providing flexibility in various dynamic switching applications where short bursts of high current are necessary.