Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin IPAK IRFU5305PBF
- RS-artikelnummer:
- 542-9951
- Distrelec artikelnummer:
- 303-41-378
- Tillv. art.nr:
- IRFU5305PBF
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
10,96 kr
(exkl. moms)
13,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 26 enhet(er) är redo att levereras
- Dessutom levereras 3 089 enhet(er) från den 02 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 + | 10,96 kr |
*vägledande pris
- RS-artikelnummer:
- 542-9951
- Distrelec artikelnummer:
- 303-41-378
- Tillv. art.nr:
- IRFU5305PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 2.3 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341378 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 6.1mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 2.3 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30341378 | ||

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF
This MOSFET is engineered for efficiency and reliability across diverse electronic applications. The advanced processing techniques incorporated enable low resistance per silicon area, making it suitable for high-performance circuit designs. Its robust capabilities accommodate a wide array of drain current and voltage specifications, ensuring optimal use in automation and electrical systems.
Features & Benefits
• High current handling capability of up to 31A
• Operates effectively in enhancement mode for improved performance
• Low static drain-to-source on-resistance for efficient energy consumption
• Broad gate-to-source voltage range of ±20V for versatile control
• Can withstand power dissipation levels up to 110W
• Compact TO-251 IPAK package facilitates space-efficient installation
Applications
• Ideal for power management in consumer electronics
• Employed in renewable energy systems for efficient control
• Suitable for power in electric vehicles
• Utilised in high-frequency switching power supplies for enhanced performance
What operating temperature range can be maintained?
The component can operate within -55°C to +175°C, suitable for various environments.
How does installation affect performance?
Proper installation in space-constrained applications optimises heat dissipation, thus enhancing reliability and performance.
What should be considered for heat management during use?
Ensuring adequate cooling methods is crucial due to its maximum power dissipation of 110 W when operating at high drain currents.
What type of circuit designs benefit from its specifications?
The low on-resistance and high current rating make it well-suited for designs focused on efficiency and minimising energy losses in applications such as motor control and power supplies.
Can it be used in parallel configurations?
Yes, it is suitable for parallel circuits; however, balancing methods should be considered to ensure uniform current distribution across devices.
relaterade länkar
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRF5305PBF
