Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220 IRL1004PBF

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Förpackningsalternativ:
RS-artikelnummer:
541-2105
Distrelec artikelnummer:
303-41-389
Tillv. art.nr:
IRL1004PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

LogicFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

100nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.69 mm

Length

10.54mm

Height

8.77mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF


This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits


• Continuous drain current capacity of up to 130A

• Maximum drain-source voltage of 40V ensuring robust performance

• Low Rds(on) of 7mΩ to decrease heat generation

• High thermal stability with a maximum operating temperature of +175°C

• Compact TO-220AB package allows for versatile mounting options

Applications


• High-efficiency power supply circuits

• Automotive and industrial automation systems

• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?


A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?


The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?


Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?


Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.

What happens if the gate-source voltage exceeds the maximum rating?


Exceeding the maximum gate-source voltage may result in device failure, so it is vital to adhere to the specified limits to ensure longevity and prevent damage.

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