Infineon LogicFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220 IRL530NPBF
- RS-artikelnummer:
- 541-1203
- Tillv. art.nr:
- IRL530NPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
13,66 kr
(exkl. moms)
17,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 04 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 13,66 kr |
| 10 - 24 | 12,99 kr |
| 25 - 49 | 12,21 kr |
| 50 - 99 | 11,65 kr |
| 100 + | 10,86 kr |
*vägledande pris
- RS-artikelnummer:
- 541-1203
- Tillv. art.nr:
- IRL530NPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | LogicFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series LogicFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon LogicFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon LogicFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon LogicFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL520NPBF
- Infineon LogicFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRL1004PBF
- Infineon LogicFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220AB
- Infineon LogicFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220AB IRL3803PBF
- Infineon LogicFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220