Infineon Typ N Kanal, MOSFET, 20.7 A 650 V Förbättring, 3 Ben, TO-247, CoolMOS C3 AEC-Q101

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Förpackningsalternativ:
RS-artikelnummer:
462-3449
Tillv. art.nr:
SPW20N60C3FKSA1
Tillverkare / varumärke:
Infineon
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Infineon

Kanaltyp

Typ N

Produkttyp

MOSFET

Maximal kontinuerlig dräneringsström Id

20.7A

Maximal källspänning för dränering Vds

650V

Kapseltyp

TO-247

Serie

CoolMOS C3

Typ av fäste

Genomgående hål

Antal ben

3

Maximal drain-källresistans Rds

190mΩ

Kanalläge

Förbättring

Typisk grindladdning Qg @ Vgs

87nC

Minsta arbetsstemperatur

-55°C

Maximal effektförlust Pd

208W

Maximal arbetstemperatur

150°C

Standarder/godkännanden

No

Längd

15.9mm

Höjd

20.95mm

Fordonsstandard

AEC-Q101

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1


This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits


• N-channel configuration enhances conduction capabilities

• Maximum continuous drain current of 21A supports intensive applications

• High voltage rating of 650V provides reliability in challenging conditions

• Low gate charge facilitates efficient switching, reducing energy losses

• Excellent thermal performance allows operation at elevated temperatures

• Designed for through-hole mounting, simplifying assembly procedures

Applications


• Power supply regulation and management in industrial systems

• Motor control systems for efficient power delivery

• Utilised in DC-DC converters for high voltage

• Integrated into renewable energy systems for effective energy conversion

• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?


It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?


A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?


Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?


This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

What safety precautions should be taken during installation?


Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.

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