STMicroelectronics MASTERG Type P, Type N-Channel MOSFET, 6.5 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN4LTR
- RS-artikelnummer:
- 287-7043
- Tillv. art.nr:
- MASTERGAN4LTR
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 enhet)*
128,40 kr
(exkl. moms)
160,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 300 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 24 | 128,40 kr |
| 25 - 49 | 115,56 kr |
| 50 - 99 | 103,88 kr |
| 100 - 249 | 93,60 kr |
| 250 + | 82,30 kr |
*vägledande pris
- RS-artikelnummer:
- 287-7043
- Tillv. art.nr:
- MASTERGAN4LTR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | QFN-9 | |
| Series | MASTERG | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 40mW | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS, ECOPACK | |
| Height | 1mm | |
| Length | 9mm | |
| Width | 9 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type QFN-9 | ||
Series MASTERG | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 40mW | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS, ECOPACK | ||
Height 1mm | ||
Length 9mm | ||
Width 9 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
relaterade länkar
- STMicroelectronics MASTERG Type P 6.5 A 31-Pin QFN-9 MASTERGAN4LTR
- STMicroelectronics MASTERG Type N 9.7 A 31-Pin QFN-9 MASTERGAN1LTR
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- STMicroelectronics Gate Driver QFN
- STMicroelectronics MASTERGAN4TR Gate Driver QFN
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
