Vishay IRFZ48R Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS-artikelnummer:
- 281-6035
- Distrelec artikelnummer:
- 171-17-666
- Tillv. art.nr:
- IRFZ48RPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 1000 enheter)*
14 921,00 kr
(exkl. moms)
18 651,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 1000 - 1000 | 14,921 kr | 14 921,00 kr |
| 2000 - 4000 | 13,802 kr | 13 802,00 kr |
| 5000 + | 12,832 kr | 12 832,00 kr |
*vägledande pris
- RS-artikelnummer:
- 281-6035
- Distrelec artikelnummer:
- 171-17-666
- Tillv. art.nr:
- IRFZ48RPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET utilizes advanced processing techniques to achieve low on-resistance per silicon area. It is an efficient and reliable device for various applications due to their fast switching speed and ruggedized design.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
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