Vishay IRFZ Type N-Channel Power MOSFET, 17 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ24PBF
- RS-artikelnummer:
- 812-0672
- Tillv. art.nr:
- IRFZ24PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
102,68 kr
(exkl. moms)
128,35 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 16 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 10,268 kr | 102,68 kr |
| 100 - 240 | 9,662 kr | 96,62 kr |
| 250 - 490 | 9,251 kr | 92,51 kr |
| 500 - 990 | 8,214 kr | 82,14 kr |
| 1000 + | 7,701 kr | 77,01 kr |
*vägledande pris
- RS-artikelnummer:
- 812-0672
- Tillv. art.nr:
- IRFZ24PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | IRFZ | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.49mm | |
| Width | 4.65 mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series IRFZ | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.49mm | ||
Width 4.65 mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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