Vishay IRF Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- RS-artikelnummer:
- 281-6027
- Distrelec artikelnummer:
- 171-16-205
- Tillv. art.nr:
- IRF840PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 1000 enheter)*
9 628,00 kr
(exkl. moms)
12 035,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 16 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 1000 - 1000 | 9,628 kr | 9 628,00 kr |
| 2000 - 4000 | 9,08 kr | 9 080,00 kr |
| 5000 + | 8,252 kr | 8 252,00 kr |
*vägledande pris
- RS-artikelnummer:
- 281-6027
- Distrelec artikelnummer:
- 171-16-205
- Tillv. art.nr:
- IRF840PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFETs offer fast switching, rugged design and low on-resistance. It is cost-effective.
Repetitive avalanche rated
Fast switching
Ease of paralleling
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