Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820PBF

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323,00 kr

(exkl. moms)

404,00 kr

(inkl. moms)

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  • Dessutom levereras 1 250 enhet(er) från den 29 december 2025
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50 - 506,46 kr323,00 kr
100 - 2005,486 kr274,30 kr
250 +4,845 kr242,25 kr

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RS-artikelnummer:
178-0851
Tillv. art.nr:
IRF820PBF
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.7 mm

Standards/Approvals

No

Length

10.41mm

Height

9.01mm

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

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