Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820PBF

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

323,00 kr

(exkl. moms)

404,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 1 250 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
50 - 506,46 kr323,00 kr
100 - 2005,486 kr274,30 kr
250 +4,845 kr242,25 kr

*vägledande pris

RS-artikelnummer:
178-0851
Tillv. art.nr:
IRF820PBF
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

9.01mm

Standards/Approvals

No

Width

4.7 mm

Length

10.41mm

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

relaterade länkar