Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- RS-artikelnummer:
- 279-9922
- Tillv. art.nr:
- SIHP054N65E-GE3
- Tillverkare / varumärke:
- Vishay
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83,78 kr
(exkl. moms)
104,72 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 83,78 kr |
| 10 - 24 | 82,10 kr |
| 25 - 99 | 80,42 kr |
| 100 + | 78,74 kr |
*vägledande pris
- RS-artikelnummer:
- 279-9922
- Tillv. art.nr:
- SIHP054N65E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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