STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS-artikelnummer:
- 275-1356
- Tillv. art.nr:
- STP80N600K6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
58,91 kr
(exkl. moms)
73,638 kr
(inkl. moms)
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- Dessutom levereras 110 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 29,455 kr | 58,91 kr |
| 10 - 18 | 26,43 kr | 52,86 kr |
| 20 + | 25,985 kr | 51,97 kr |
*vägledande pris
- RS-artikelnummer:
- 275-1356
- Tillv. art.nr:
- STP80N600K6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 86W | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 86W | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
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