STMicroelectronics STripFETTM F7 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin ECOPACK STK184N4F7AG
- RS-artikelnummer:
- 273-5096
- Tillv. art.nr:
- STK184N4F7AG
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
41,55 kr
(exkl. moms)
51,938 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 300 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 20,775 kr | 41,55 kr |
| 10 - 98 | 18,705 kr | 37,41 kr |
| 100 - 248 | 16,855 kr | 33,71 kr |
| 250 - 498 | 15,12 kr | 30,24 kr |
| 500 + | 13,665 kr | 27,33 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5096
- Tillv. art.nr:
- STK184N4F7AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ECOPACK | |
| Series | STripFETTM F7 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 to 5 mm | |
| Height | 1.2mm | |
| Length | 6.2mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ECOPACK | ||
Series STripFETTM F7 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 to 5 mm | ||
Height 1.2mm | ||
Length 6.2mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics automotive-grade N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
AEC-Q101 qualified
Excellent FoM
High avalanche ruggedness
Relaterade länkar
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