Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

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24 294,00 kr

(exkl. moms)

30 366,00 kr

(inkl. moms)

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RS-artikelnummer:
268-8348
Tillv. art.nr:
SISS5710DN-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26.2A

Maximum Drain Source Voltage Vds

150V

Series

SISS

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0315Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

54.3W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

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