Vishay SIJH Type N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- RS-artikelnummer:
- 268-8324
- Tillv. art.nr:
- SIJH5700E-T1-GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 2000 enheter)*
68 940,00 kr
(exkl. moms)
86 180,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 10 september 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 34,47 kr | 68 940,00 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8324
- Tillv. art.nr:
- SIJH5700E-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK (8x8L) | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 150°C | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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