Vishay N-Channel 80 V Type N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3

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115,58 kr

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144,48 kr

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Förpackningsalternativ:
RS-artikelnummer:
225-9921
Tillv. art.nr:
SIJH800E-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

299A

Maximum Drain Source Voltage Vds

80V

Series

N-Channel 80 V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.8mΩ

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

3.3W

Typical Gate Charge Qg @ Vgs

210nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

8.1mm

Height

8mm

Standards/Approvals

No

Width

1.9 mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Fully lead (Pb)-free device

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

50 % smaller footprint than D2PAK (TO-263)

100 % Rg and UIS tested

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