Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC

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Antal (1 rör med 25 enheter)*

1 338,175 kr

(exkl. moms)

1 672,725 kr

(inkl. moms)

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Enheter
Per enhet
Per Rør*
25 - 7553,527 kr1 338,18 kr
100 - 47543,837 kr1 095,93 kr
500 - 97537,363 kr934,08 kr
1000 +33,506 kr837,65 kr

*vägledande pris

RS-artikelnummer:
268-8296
Tillv. art.nr:
SIHG085N60EF-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247AC

Series

SIHG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode which has reduced switching and conduction losses, and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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