Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC

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Antal (1 rör med 25 enheter)*

1 338,175 kr

(exkl. moms)

1 672,725 kr

(inkl. moms)

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  • Dessutom levereras 500 enhet(er) från den 19 januari 2026
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Enheter
Per enhet
Per Rør*
25 - 7553,527 kr1 338,18 kr
100 - 47543,837 kr1 095,93 kr
500 - 97537,363 kr934,08 kr
1000 +33,506 kr837,65 kr

*vägledande pris

RS-artikelnummer:
268-8296
Tillv. art.nr:
SIHG085N60EF-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247AC

Series

SIHG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

184W

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

15.7mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode which has reduced switching and conduction losses, and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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