STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel
- RS-artikelnummer:
- 265-1035P
- Tillv. art.nr:
- SGT120R65AL
- Tillverkare / varumärke:
- STMicroelectronics
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800,75 kr
(exkl. moms)
1 000,95 kr
(inkl. moms)
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Tillfälligt slut
- Leverans från den 01 maj 2026
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Enheter | Per enhet |
|---|---|
| 50 - 98 | 16,015 kr |
| 100 - 248 | 15,57 kr |
| 250 - 998 | 15,175 kr |
| 1000 + | 14,785 kr |
*vägledande pris
- RS-artikelnummer:
- 265-1035P
- Tillv. art.nr:
- SGT120R65AL
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | G-HEMT | |
| Package Type | Reel | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series G-HEMT | ||
Package Type Reel | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
