Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23
- RS-artikelnummer:
- 264-8942
- Tillv. art.nr:
- VN2110K1-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 3000 enheter)*
14 436,00 kr
(exkl. moms)
18 045,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 4,812 kr | 14 436,00 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8942
- Tillv. art.nr:
- VN2110K1-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | VN2110 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 2.9mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series VN2110 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 2.9mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
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