Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF
- RS-artikelnummer:
- 130-1027
- Tillv. art.nr:
- IRLS3036TRLPBF
- Tillverkare / varumärke:
- Infineon
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66,45 kr
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83,062 kr
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| 2 - 18 | 33,225 kr | 66,45 kr |
| 20 - 48 | 29,255 kr | 58,51 kr |
| 50 - 98 | 27,24 kr | 54,48 kr |
| 100 - 198 | 25,27 kr | 50,54 kr |
| 200 + | 18,28 kr | 36,56 kr |
*vägledande pris
- RS-artikelnummer:
- 130-1027
- Tillv. art.nr:
- IRLS3036TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
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Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 380W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.65mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 380W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.65mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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