Infineon iPB Type N-Channel MOSFET, 135 A, 100 V P TO-263

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7 922,40 kr

(exkl. moms)

9 903,20 kr

(inkl. moms)

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800 - 8009,903 kr7 922,40 kr
1600 +9,407 kr7 525,60 kr

*vägledande pris

RS-artikelnummer:
259-2586
Tillv. art.nr:
IPB043N10NF2SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

135A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Channel Mode

P

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

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