Infineon iPB Type N-Channel MOSFET, 170 A, 80 V P TO-263 IPB019N08NF2SATMA1

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76,83 kr

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96,038 kr

(inkl. moms)

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2 - 1838,415 kr76,83 kr
20 - 4834,665 kr69,33 kr
50 - 9832,31 kr64,62 kr
100 - 19830,465 kr60,93 kr
200 +28,00 kr56,00 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
259-2575
Tillv. art.nr:
IPB019N08NF2SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Channel Mode

P

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

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