Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN IRFH8303TRPBF
- RS-artikelnummer:
- 258-3972
- Tillv. art.nr:
- IRFH8303TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
41,66 kr
(exkl. moms)
52,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 3 998 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 20,83 kr | 41,66 kr |
| 20 - 48 | 18,76 kr | 37,52 kr |
| 50 - 98 | 17,47 kr | 34,94 kr |
| 100 - 198 | 16,465 kr | 32,93 kr |
| 200 + | 15,23 kr | 30,46 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3972
- Tillv. art.nr:
- IRFH8303TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
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