Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1
- RS-artikelnummer:
- 258-3903
- Tillv. art.nr:
- IPT019N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
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47,94 kr
(exkl. moms)
59,92 kr
(inkl. moms)
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- Dessutom levereras 1 745 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 47,94 kr |
| 10 - 24 | 45,70 kr |
| 25 - 49 | 44,58 kr |
| 50 - 99 | 41,78 kr |
| 100 + | 38,86 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3903
- Tillv. art.nr:
- IPT019N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 247A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 247A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type HSOF | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V n-channel power MOSFET in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles, POL and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-leadless is the perfect solution where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
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