Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263

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19 698,00 kr

(exkl. moms)

24 622,00 kr

(inkl. moms)

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RS-artikelnummer:
258-3790
Tillv. art.nr:
IPB032N10N5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

166A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

N

Maximum Power Dissipation Pd

187W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

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