Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263
- RS-artikelnummer:
- 258-3788
- Tillv. art.nr:
- IPB024N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
15 849,00 kr
(exkl. moms)
19 811,00 kr
(inkl. moms)
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- Dessutom levereras 1 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 15,849 kr | 15 849,00 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3788
- Tillv. art.nr:
- IPB024N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 166A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.92V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 166A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.92V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
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