Infineon HEXFET Type N-Channel MOSFET, 230 A, 75 V TO-263 IRFS3107TRLPBF
- RS-artikelnummer:
- 257-9420
- Tillv. art.nr:
- IRFS3107TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
48,94 kr
(exkl. moms)
61,18 kr
(inkl. moms)
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- Dessutom levereras 296 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 48,94 kr |
| 10 - 24 | 44,13 kr |
| 25 - 49 | 40,99 kr |
| 50 - 99 | 38,19 kr |
| 100 + | 35,73 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9420
- Tillv. art.nr:
- IRFS3107TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFS series is the 75V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability lead free
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