Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF
- RS-artikelnummer:
- 257-9331
- Tillv. art.nr:
- IRF9358TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
74,06 kr
(exkl. moms)
92,575 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 705 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 14,812 kr | 74,06 kr |
| 50 - 120 | 12,746 kr | 63,73 kr |
| 125 - 245 | 11,85 kr | 59,25 kr |
| 250 - 495 | 9,654 kr | 48,27 kr |
| 500 + | 6,676 kr | 33,38 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9331
- Tillv. art.nr:
- IRF9358TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate drive voltage (called Logic level)
Capable of being driven at 2.5V gate drive voltage (called super logic level)
Reduced design complexity in high side configuration
Easier interface to microcontroller
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