Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN IRFH7545TRPBF
- RS-artikelnummer:
- 257-5818
- Tillv. art.nr:
- IRFH7545TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
42,91 kr
(exkl. moms)
53,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 790 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 8,582 kr | 42,91 kr |
| 50 - 120 | 7,526 kr | 37,63 kr |
| 125 - 245 | 7,10 kr | 35,50 kr |
| 250 - 495 | 5,556 kr | 27,78 kr |
| 500 + | 4,278 kr | 21,39 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5818
- Tillv. art.nr:
- IRFH7545TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.17mm | |
| Width | 6 mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Height 1.17mm | ||
Width 6 mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN IRFH5406TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IRFH5006TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN