Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN IRFH7932TRPBF

RS-artikelnummer:: 220-7486
Tillv. art.nr:: IRFH7932TRPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN IRFH7932TRPBF

Mängdrabatt möjlig

Antal (1 förpackning med 15 enheter)*

150,315 kr

(exkl. moms)

187,89 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 9 435 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
15 - 60	10,021 kr	150,32 kr
75 - 135	9,52 kr	142,80 kr
150 - 360	9,319 kr	139,79 kr
375 - 735	8,721 kr	130,82 kr
750 +	8,124 kr	121,86 kr

*vägledande pris

RS-artikelnummer:: 220-7486
Tillv. art.nr:: IRFH7932TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	3.4W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	1mm
	Width	5.1 mm
	Length	6.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 3.4W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 1mm
	Width 5.1 mm
	Length 6.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFH7932TRPBF

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Very low RDS(ON) at 4.5V VGS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for RG

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

Large Source Lead for more reliable Soldering

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN IRFH7932TRPBF

GRATIS leverans för online beställningar över 500,00 kr

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