Vishay Type N-Channel MOSFET, 5.3 A, 500 V IPAK SIHU5N50D-GE3
- RS-artikelnummer:
- 256-7417
- Tillv. art.nr:
- SIHU5N50D-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
92,51 kr
(exkl. moms)
115,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 3 000 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 10 | 9,251 kr | 92,51 kr |
| 20 - 40 | 9,061 kr | 90,61 kr |
| 50 - 90 | 8,882 kr | 88,82 kr |
| 100 - 490 | 7,19 kr | 71,90 kr |
| 500 + | 5,97 kr | 59,70 kr |
*vägledande pris
- RS-artikelnummer:
- 256-7417
- Tillv. art.nr:
- SIHU5N50D-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 500 V 5.3A (Tc) 104W (Tc) through hole TO-251AA and its applications are consumer electronicsdisplays, server and telecom power supplies, SMPS and in Industrial are welding, induction heating, motor drives and battery chargers.
Low area specific on-resistance
Reduced capacitive switching losses
High body diode ruggedness
Optimal efficiency and operation
Simple gate drive circuitry
Fast switching
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