DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2055UQ-7
- RS-artikelnummer:
- 254-8602
- Tillv. art.nr:
- DMN2055UQ-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
18,80 kr
(exkl. moms)
23,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 2 900 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 0,752 kr | 18,80 kr |
| 50 - 75 | 0,73 kr | 18,25 kr |
| 100 - 225 | 0,717 kr | 17,93 kr |
| 250 - 975 | 0,699 kr | 17,48 kr |
| 1000 + | 0,681 kr | 17,03 kr |
*vägledande pris
- RS-artikelnummer:
- 254-8602
- Tillv. art.nr:
- DMN2055UQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2040U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2040U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Low input capacitance
ESD protected gate
Halogen and antimony Free
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