DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2053UQ-13
- RS-artikelnummer:
- 244-1917
- Tillv. art.nr:
- DMN2053UQ-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
47,70 kr
(exkl. moms)
59,625 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 9 100 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 475 | 1,908 kr | 47,70 kr |
| 500 - 975 | 1,42 kr | 35,50 kr |
| 1000 - 2475 | 1,38 kr | 34,50 kr |
| 2500 - 4975 | 1,344 kr | 33,60 kr |
| 5000 + | 1,322 kr | 33,05 kr |
*vägledande pris
- RS-artikelnummer:
- 244-1917
- Tillv. art.nr:
- DMN2053UQ-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2040U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2040U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low input capacitance
Low input or output leakage
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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