Infineon IAUA Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA250N04S6N007EAUMA1
- RS-artikelnummer:
- 254-7202
- Tillv. art.nr:
- IAUA250N04S6N007EAUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
28,26 kr
(exkl. moms)
35,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 900 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 28,26 kr |
| 10 - 24 | 26,88 kr |
| 25 - 49 | 25,65 kr |
| 50 - 99 | 24,53 kr |
| 100 + | 22,96 kr |
*vägledande pris
- RS-artikelnummer:
- 254-7202
- Tillv. art.nr:
- IAUA250N04S6N007EAUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUA | |
| Package Type | PG-HSOF-5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUA | ||
Package Type PG-HSOF-5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineons IAUA series of automotive MOSFET consist of n-channel with enhancement mode at normal level with an operating temperature of 175°C. It is a green product with enhanced electrical testing.
Robust design
Voltage rating from drain to source is 40 V
Power dissipation is 192 W
relaterade länkar
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA120N04S5N014AUMA1
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA250N04S6N005AUMA1
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA250N04S6N008AUMA1
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 5-Pin HSOF
- Infineon IAUA Type N-Channel MOSFET 40 V Enhancement, 5-Pin HSOF IAUA180N04S5N012AUMA1