Vishay Type N-Channel MOSFET, 141 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

86,35 kr

(exkl. moms)

107,94 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 2 960 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
10 - 908,635 kr86,35 kr
100 - 2408,12 kr81,20 kr
250 - 4907,347 kr73,47 kr
500 - 9906,91 kr69,10 kr
1000 +6,474 kr64,74 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
252-0324
Tillv. art.nr:
SQS180ELNW-T1_GE3
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

141A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

94nC

Maximum Operating Temperature

175°C

Width

3.3 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

relaterade länkar