Vishay Type N-Channel MOSFET, 36.2 A, 60 V Depletion, 8-Pin PowerPAK 1212-8

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Antal (1 rulle med 3000 enheter)*

9 000,00 kr

(exkl. moms)

11 250,00 kr

(inkl. moms)

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  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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3000 +3,00 kr9 000,00 kr

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RS-artikelnummer:
252-0288
Tillv. art.nr:
SIS4608LDN-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.2A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

33.7W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

14.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3.3mm

Width

3.3 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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