Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- RS-artikelnummer:
- 250-0595
- Tillv. art.nr:
- IPT60R055CFD7XTMA1
- Tillverkare / varumärke:
- Infineon
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68,10 kr
(exkl. moms)
85,12 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 68,10 kr |
| 10 - 24 | 64,96 kr |
| 25 - 49 | 62,05 kr |
| 50 - 99 | 59,25 kr |
| 100 + | 55,22 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0595
- Tillv. art.nr:
- IPT60R055CFD7XTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.
Best-in-class RDS(on) in SMD and THD packages
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
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