Infineon Typ N Kanal, MOSFET, 0.12 A 40 V Avskrivningar, 3 Ben, SOT-223, BSP AEC-Q101
- RS-artikelnummer:
- 250-0530
- Tillv. art.nr:
- BSP129H6906XTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
27,92 kr
(exkl. moms)
34,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 4 540 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 5,584 kr | 27,92 kr |
| 50 - 120 | 5,018 kr | 25,09 kr |
| 125 - 245 | 4,614 kr | 23,07 kr |
| 250 - 495 | 4,324 kr | 21,62 kr |
| 500 + | 4,188 kr | 20,94 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0530
- Tillv. art.nr:
- BSP129H6906XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Varumärke | Infineon | |
| Kanaltyp | Typ N | |
| Produkttyp | MOSFET | |
| Maximal kontinuerlig dräneringsström Id | 0.12A | |
| Maximal källspänning för dränering Vds | 40V | |
| Serie | BSP | |
| Kapseltyp | SOT-223 | |
| Fästetyp | Yta | |
| Antal ben | 3 | |
| Maximal drain-källresistans Rds | 1.4mΩ | |
| Kanalläge | Avskrivningar | |
| Minsta arbetsstemperatur | -55°C | |
| Typisk grindladdning Qg @ Vgs | 80nC | |
| Framåtriktad spänning Vf | 1V | |
| Maximal effektförlust Pd | 81W | |
| Maximal spänning för grindkälla Vgs | 20 V | |
| Maximal arbetstemperatur | 175°C | |
| Standarder/godkännanden | RoHS | |
| Fordonsstandard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Varumärke Infineon | ||
Kanaltyp Typ N | ||
Produkttyp MOSFET | ||
Maximal kontinuerlig dräneringsström Id 0.12A | ||
Maximal källspänning för dränering Vds 40V | ||
Serie BSP | ||
Kapseltyp SOT-223 | ||
Fästetyp Yta | ||
Antal ben 3 | ||
Maximal drain-källresistans Rds 1.4mΩ | ||
Kanalläge Avskrivningar | ||
Minsta arbetsstemperatur -55°C | ||
Typisk grindladdning Qg @ Vgs 80nC | ||
Framåtriktad spänning Vf 1V | ||
Maximal effektförlust Pd 81W | ||
Maximal spänning för grindkälla Vgs 20 V | ||
Maximal arbetstemperatur 175°C | ||
Standarder/godkännanden RoHS | ||
Fordonsstandard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1
This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.
Features & Benefits
• N-channel configuration supports efficient switching operations
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage
Applications
• Suitable for automotive control systems
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency
How can proper installation be ensured for optimal performance?
Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.
What should be considered for thermal management during operation?
Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.
What type of gate drive is recommended for this product?
A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.
Can this MOSFET be utilised in high-speed switching applications?
Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.
What should be noted regarding gate charge characteristics?
The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.
