Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363

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2 700,00 kr

(exkl. moms)

3 360,00 kr

(inkl. moms)

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Enheter
Per enhet
Per rulle*
3000 - 30000,90 kr2 700,00 kr
6000 - 120000,855 kr2 565,00 kr
15000 +0,819 kr2 457,00 kr

*vägledande pris

RS-artikelnummer:
250-0520
Tillv. art.nr:
BSD223PH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-0.39A

Maximum Drain Source Voltage Vds

40V

Series

BSD

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.

Consistently meet the highest quality and performance demands

Great on-state resistance and figure of merit characteristics

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