Infineon AUIRFS Type N-Channel MOSFET, 72 A, 20 V, 3-Pin TO-263 AUIRFS4127TRL
- RS-artikelnummer:
- 249-6876
- Tillv. art.nr:
- AUIRFS4127TRL
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
70,60 kr
(exkl. moms)
88,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 31 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 70,60 kr |
| 10 - 24 | 67,09 kr |
| 25 - 49 | 64,29 kr |
| 50 - 99 | 61,38 kr |
| 100 + | 57,23 kr |
*vägledande pris
- RS-artikelnummer:
- 249-6876
- Tillv. art.nr:
- AUIRFS4127TRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | AUIRFS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series AUIRFS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
relaterade länkar
- Infineon AUIRFS Type N-Channel MOSFET 20 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 60 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 20 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 60 V, 3-Pin TO-263 AUIRFS3306TRL
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-263 AUIRFR2407TRL