Infineon IPT Type N-Channel MOSFET, 143 A, 150 V Enhancement, 8-Pin HSOF-8 IPT054N15N5ATMA1
- RS-artikelnummer:
- 249-3354
- Tillv. art.nr:
- IPT054N15N5ATMA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
50,13 kr
(exkl. moms)
62,66 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 50,13 kr |
| 10 - 24 | 47,62 kr |
| 25 - 49 | 46,57 kr |
| 50 - 99 | 43,66 kr |
| 100 + | 40,56 kr |
*vägledande pris
- RS-artikelnummer:
- 249-3354
- Tillv. art.nr:
- IPT054N15N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 143A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 143A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.
Vds (drain to source voltage) is 150 V
Rds (max on) is 5.4 milliohm and Id is 143 A
Qdss and Qg values are 155 nC and 55 nC respectively
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