onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- RS-artikelnummer:
- 229-6510
- Tillv. art.nr:
- NXH006P120MNF2PTG
- Tillverkare / varumärke:
- onsemi
Antal (1 enhet)*
2 888,37 kr
(exkl. moms)
3 610,46 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 30 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 + | 2 888,37 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6510
- Tillv. art.nr:
- NXH006P120MNF2PTG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 304A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F2 | |
| Mount Type | Chassis | |
| Pin Count | 36 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 950W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 847nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Height | 17mm | |
| Length | 63.3mm | |
| Standards/Approvals | Halide Free, Pb-Free, RoHS | |
| Width | 57 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 304A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F2 | ||
Mount Type Chassis | ||
Pin Count 36 | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 950W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 847nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Height 17mm | ||
Length 63.3mm | ||
Standards/Approvals Halide Free, Pb-Free, RoHS | ||
Width 57 mm | ||
Automotive Standard No | ||
The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.
Options with pre−applied thermal interface material
Options with solderable pins and press−fit pins
Pb−free
RoHS compliant
relaterade länkar
- onsemi Isolated Type N-Channel SiC Power Module 1200 V, 36-Pin F2
- onsemi SiC Power Module, 1200 V F1-2PACK
- onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG
- onsemi SiC N-Channel MOSFET 1200 V, 7-Pin D2PAK NVBG020N120SC1
- STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module 1200 V Enhancement, 8-Pin ACEPACK 2 A2U12M12W2-F2
- STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module 1200 V Enhancement, 8-Pin ACEPACK 2
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- Infineon EVAL-PS-E1BF12-SIC Buck-Boost Converter for EiceDRIVER 1200 V isolated gate driver 1EDI60I12AF for