DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC DMT68M8LSS-13

Mängdrabatt möjlig

Antal (1 förpackning med 25 enheter)*

121,35 kr

(exkl. moms)

151,70 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 2 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
25 - 254,854 kr121,35 kr
50 - 754,758 kr118,95 kr
100 - 2253,633 kr90,83 kr
250 - 9753,562 kr89,05 kr
1000 +3,346 kr83,65 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
246-7558
Tillv. art.nr:
DMT68M8LSS-13
Tillverkare / varumärke:
DiodesZetex
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

12V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.73W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

1.45mm

Standards/Approvals

No

Width

3.85 mm

Length

4.9mm

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

relaterade länkar