DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN

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4 100,00 kr

(exkl. moms)

5 100,00 kr

(inkl. moms)

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10000 +0,41 kr4 100,00 kr

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RS-artikelnummer:
246-6796
Tillv. art.nr:
DMN2451UFB4-7B
Tillverkare / varumärke:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

20V

Package Type

X2-DFN

Series

DMN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

900mW

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

0.65 mm

Height

0.4mm

Length

1.05mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1006-3 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

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