DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2450UFB4-7R
- RS-artikelnummer:
- 182-7146
- Tillv. art.nr:
- DMN2450UFB4-7R
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 250 enheter)*
227,50 kr
(exkl. moms)
285,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 13 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 250 - 250 | 0,91 kr | 227,50 kr |
| 500 - 750 | 0,78 kr | 195,00 kr |
| 1000 - 1250 | 0,682 kr | 170,50 kr |
| 1500 - 1750 | 0,606 kr | 151,50 kr |
| 2000 + | 0,546 kr | 136,50 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7146
- Tillv. art.nr:
- DMN2450UFB4-7R
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 0.65 mm | |
| Height | 0.35mm | |
| Length | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 0.65 mm | ||
Height 0.35mm | ||
Length 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Footprint of just 0.6mm2
– Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Load Switch
relaterade länkar
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 3-Pin X2-DFN DMN1260UFA-7B
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN DMN2300UFB4-7B
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN DMN2451UFB4-7B
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 3-Pin X1-DFN
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin X1-DFN