Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-263 IXFA36N60X3
- RS-artikelnummer:
- 245-6996
- Tillv. art.nr:
- IXFA36N60X3
- Tillverkare / varumärke:
- Littelfuse
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55,82 kr
(exkl. moms)
69,78 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 55,82 kr |
| 10 - 24 | 50,35 kr |
| 25 - 49 | 49,34 kr |
| 50 - 99 | 47,84 kr |
| 100 + | 41,59 kr |
*vägledande pris
- RS-artikelnummer:
- 245-6996
- Tillv. art.nr:
- IXFA36N60X3
- Tillverkare / varumärke:
- Littelfuse
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO263 package. These Power MOSFETs feature significantly reduced channel resistance RDSon and gate charge Qg. They feature the lowest figures of merit RDS Qg and RthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETseries of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
relaterade länkar
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