DiodesZetex DMN Type N-Channel MOSFET, 230 mA, 20 V Enhancement, 3-Pin SC-89 DMN2710UTQ-7
- RS-artikelnummer:
- 246-7514
- Tillv. art.nr:
- DMN2710UTQ-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
53,55 kr
(exkl. moms)
66,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 2 950 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 2,142 kr | 53,55 kr |
| 50 - 75 | 2,106 kr | 52,65 kr |
| 100 - 225 | 1,55 kr | 38,75 kr |
| 250 - 975 | 1,51 kr | 37,75 kr |
| 1000 + | 1,478 kr | 36,95 kr |
*vägledande pris
- RS-artikelnummer:
- 246-7514
- Tillv. art.nr:
- DMN2710UTQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12.9nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.85 mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12.9nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 300mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.85 mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT523 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±6 V It offers a ultra-small package size Its thermally efficient package enables higher density end products
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