Microchip MSC080SMA120B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS-artikelnummer:
- 241-9268
- Tillv. art.nr:
- MSC080SMA120B4
- Tillverkare / varumärke:
- Microchip
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2 511,93 kr
(exkl. moms)
3 139,92 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 83,731 kr | 2 511,93 kr |
| 120 + | 76,948 kr | 2 308,44 kr |
*vägledande pris
- RS-artikelnummer:
- 241-9268
- Tillv. art.nr:
- MSC080SMA120B4
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC080SMA120B4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC080SMA120B4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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