Microchip MSC025SMA120B Type N-Channel MOSFET, 140 A, 12 V TO-247
- RS-artikelnummer:
- 241-9252
- Tillv. art.nr:
- MSC025SMA120B
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
10 910,58 kr
(exkl. moms)
13 638,24 kr
(inkl. moms)
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- Dessutom levereras 270 enhet(er) från den 26 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 363,686 kr | 10 910,58 kr |
| 120 + | 333,865 kr | 10 015,95 kr |
*vägledande pris
- RS-artikelnummer:
- 241-9252
- Tillv. art.nr:
- MSC025SMA120B
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | MSC025SMA120B | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series MSC025SMA120B | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max)equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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